Confocal microphotoluminescence of InGaN-based light-emitting diodes
نویسندگان
چکیده
منابع مشابه
Confocal microphotoluminescence of InGaN-based light-emitting diodes
Spatially resolved photoluminescence PL of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes LEDs with a yellow-green light 530 nm and an amber light 600 nm was measured by using confocal microscopy. Submicron-scale spatial inhomogeneities of both PL intensities and spectra were found in confocal micro-PL images. We also found clear correlations between PL intensities and peak...
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Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...
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C. Griffin a) , E. Gu, H.W. Choi, C. W. Jeon, J.M. Girkin, and M.D. Dawson Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, United Kingdom G. McConnell, Centre for Biophotonics, University of Strathclyde 27 Taylor Street, Glasgow G4 0NR, United Kingdom Abstract The recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emi...
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Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and fur...
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Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a hali...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2005
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2037869